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| IRFZ24VPBF hexfet ? power mosfet parameter typ. max. units r jc junction-to-case CCC 3.4 r cs case-to-sink, flat, greased surface 0.50 CCC c/w r ja junction-to-ambient CCC 62 thermal resistance www.irf.com 1 v dss = 60v r ds(on) = 60m ? i d = 17a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated optimized for smps applications description pd - 95623 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current 68 p d @t c = 25c power dissipation 44 w linear derating factor 0.29 w/c v gs gate-to-source voltage 20 v i ar avalanche current 17 a e ar repetitive avalanche energy 4.4 mj dv/dt peak diode recovery dv/dt 4.2 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) lead-free downloaded from: http:///
2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source c urrent integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 17a, v gs = 0v t rr reverse recovery time CCC 53 79 ns t j = 25c, i f = 17a q rr reverse recovery charge CCC 90 130 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 17 68 starting t j = 25c, l = 300h r g = 25 ? , i as = 17a, v gs =10v (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 17a di/d 240a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.06 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 60 m ? v gs = 10v, i d = 10a v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 7.8 CCC CCC s v ds = 25v, i d = 10a CCC CCC 25 a v ds = 60v, v gs = 0v CCC CCC 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 23 i d = 17a q gs gate-to-source charge CCC CCC 7.7 nc v ds = 48v q gd gate-to-drain ("miller") charge CCC CCC 6.2 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 7.6 CCC v dd = 30v t r rise time CCC 46 CCC i d = 17a t d(off) turn-off delay time CCC 21 CCC r g = 18 ? t f fall time CCC 24 CCC v gs = 10v, see fig. 10 between lead, CCC CCC 6mm (0.25in.)from package and center of die contact c iss input capacitance CCC 590 CCC v gs = 0v c oss output capacitance CCC 140 CCC v ds = 25v c rss reverse transfer capacitance CCC 23 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy CCC 140 43 mj i as = 17a, l = 300h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns i dss drain-to-source leakage current downloaded from: http:/// www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 17a downloaded from: http:/// 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 17a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:/// www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d v ds 90%10% v gs t d(on) t r t d(off) t f 1 0.1 % + - downloaded from: http:/// 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.9a 12a 17a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:/// www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? !"# % $" " % $#" "# ? %&' ? ( ) ? %&% * + $ #,- % #) " , ,)!$. &' %%% / ,%+"% ""# for n-channel hexfet ? power mosfets downloaded from: http:/// 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 8/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" downloaded from: http:/// note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:/// |
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